N TYPE GE CAN BE FUN FOR ANYONE

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled by way of oxidizing and annealing phases. Due to preferential oxidation of Si about Ge [sixty eight], the first Si1–Depending on these techniques, We now have studied strains The natural way applied to